May 2001 fqp30n06l 60v logic nchannel mosfet general description these nchannel enhancement mode power field effect. The utc is a high voltage and high current power mosfet, designed to have better. Please note the new package dimensions arccording to pcn 2009. The utc is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low.
Aug 18, 2019 10n60c datasheet pdf posted on august 18, 2019 by admin 10n60c datasheet pdf download fqp10n60c, 10n60c data sheet. The utc is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche characteristics. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 2. The utc 10n60tc is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low datashert resistance and a high rugged avalanche characteristics. The utc 10n60tc is a high voltage and high current power. Fqp30n06l 2001 fairchild semiconductor corporation rev. Eabsolute maximum ratings tc 25c unless otherwise specifiedparametersymbolratings datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The utc 10n60tc is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge. Utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. The utc 10n60 is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high.
The utc 10n60 is a high voltage and high current power. The utc 10n60 is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche. Led lighting mosfet 10n60 10n60f 600v 10a to220220f n channel led lighting mosfet 10n60 10n60f 600v 10a to. Jul 14, 2019 10n60 datasheet pdf pinout nchannel mosfet. Irfr1n60a, irfu1n60a, sihfr1n60a, sihfu1n60a vishay siliconix power mosfet features product summary halogenfree. Fqa24n60 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Utc 10 amps, volts nchannel power mosfet,alldatasheet, datasheet, datasheet search. Jun 17, 2019 10n60 datasheet, 10n60 circuit, 10n60 data sheet. Internal schematic diagram features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications. The utc 10nq is a high voltage and high current power. If you agree to this agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this agreement, and your agreement to these terms will be regarded as the agreement of such company. O 3source pad the packaged product is widely used in acdc, 3vd446600yl 3vd446600yl high voltage mosfet chips description o 3vd446600yl is a high voltage nchannel enhancement mode power mosfet. Pulse width limited by maximum junction temperature.
If you agree to this agreement on behalf of a company, you represent and warrant that you have authority to bind such. Jun 03, 2019 10n60 datasheet, 10n60 circuit, 10n60 data sheet. Utc, alldatasheet, datasheet, datasheet search site for electronic components and. Nchannel 10 a mosfet are available at mouser electronics. O ordering information ordering number package pin assignment packing lead free halogen. May 2001 fqp30n06l 60v logic nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Mosfet power, single, nchannel, dpakipak 30 v, 41 a features low rdson to minimize conduction losses low capacitance to minimize driver losses optimized gate charge to minimize. Aug 19, 2019 10n60 datasheet, 10n60 circuit, 10n60 data sheet. Utc 10 amps, 600650 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low. Aug 20, 2019 10n60c datasheet pdf 10n60c datasheet pdf download fqp10n60c, 10n60c data sheet.
Mar 14, 2019 k2996 datasheet pdf n channel mosfet toshiba, 2sk2996 datasheet, k2996 pdf, k2996 pinout, k2996 equivalent, data, circuit, ic, schematic, 2sk2996. O ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 10n60lta3t 10n60gta3t to220 g d s tube 10n60ltf3t 10n60gtf3t to220f g d s tube. Mosfet power, single, nchannel, dpakipak 30 v, 41 a features low rdson to minimize conduction losses low capacitance to minimize driver losses optimized gate charge to minimize switching losses three package variations for design flexibility these devices are pb. Mosfet, designed to have better characteristics, such as fast switching time, low gate charge, the utc 10n60 q is a high voltage and. Nchannel 100 v ds mosfet features halogenfree according to iec 61249221 definition % r0 10 g and uis tested trenchfet power mosfet compliant to rohs directive 200295ec notes. Id 20 a feature new revolutionary high voltage technology ultra low gate charge. This advanced technology has been especially tailored to. Jul 15, 2019 10n60c datasheet pdf source absolute maximum ratings symbol 1. Datasheet 10a, 600v, nchannel power mosfet srm10n60 general description symbol the sanrise. Mosfet 10n60 10n60 3vd446600yl mosfet 10n60 data sheet text.
The utc 10n60 cb is a high voltage and high current power. Mosfet symbol showing the integral reverse p n junction diode 1. The utc 10n60tc is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and a high rugged avalanche characteristics. Std10nm60n, stf10nm60n, stp10nm60n, stu10nm60n nchannel 600 v, 0.
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